联系我们

联系人:翁小姐
手 机:15999672043
电 话:0755-27578368 / 27578409 / 27578291
传 真:0755-27578290 / 27589393
邮 箱:[email protected]
网 址:www.szgkt.com
地 址:深圳市宝安45区翻身路富源大厦6楼
 
 您当前的位置:首页 > 产品中心 > 三极管 > TIP系列

TIP系列

上一篇:L7805 KOR103

下一篇:PN 134-600E M0403E4

  • 名称: TIP12×
  • 类别: TIP系列
    •   
    • 分享到:

  详细介绍:

 

 DESCRIPTION:

 The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors  in monolithic

 Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use

 in power linear and switching applications.The complementary PNP types are TIP125,TIP126 and

 TIP127, respectively.

 

 ABSOLUTE MAXIMUM RATINGS:

Symbol

Parameter

Value

Unit

NPN

TIP120

TIP121

TIP122

PNP

TIP125

TIP126

TIP127

VCBO

Collector-Base Voltage (IE = 0)

60

80

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

60

80

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

5

A

ICM

Collector Peak Current

8

A

IB

Base Current

0.1

A

Tstg

Storage Temperature

-65 to 150

Tj

Max. Operating Junction Temperature

150

 

 ELECTRICAL CHARACTERISTICS:

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ICEO

Collector Cut-off

Current (IB = 0)

for TIP120/125  VCE = 30 V

0.5

mA

for TIP121/126  VCE = 40 V

0.5

for TIP122/127  VCE = 50 V

0.5

ICBO

Collector Cut-off

Current (IB = 0)

for TIP120/125  VCB = 60 V

0.2

mA

for TIP121/126  VCB = 80 V

0.2

for TIP122/127  VCB = 100 V

0.2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus)

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

60

80

100

V

for TIP120/125

for TIP121/126

for TIP122/127

VCE(sat)

Collector-Emitter

Saturation Voltage

IC = 3 A         IB = 12 mA

2

4

V

IC = 5 A         IB = 20 mA

VBE(on)

Base-Emitter Voltage

IC = 3 A         VCE = 3 V

V

hFE

DC Current Gain

IC = 0.5 A        VCE = 3 V

1000

IC = 3 A          VCE = 3 V

1000


上一篇:L7805 KOR103

下一篇:PN 134-600E M0403E4

请各位朋友注意遵纪守法并注意文明用语!
  • 验证码:

 

在线留言